发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
Embodiments provide methods of manufacturing a semiconductor device. The method includes forming an interlayer insulating layer on a substrate; forming a plurality of contact holes penetrating the interlayer insulating layer, the plurality of contact holes arranged along a first direction and a second direction perpendicular to the first direction; and forming contacts in the contact holes, each contact hole being formed using a photo mask that is distinct from a photo mask used for forming a contact hole immediately adjacent to each contact hole in the first direction and distinct from a photo mask used for forming a contact hole immediately adjacent to each contact hole in the second direction, and top surfaces of the contacts being at a same level from the substrate. |
申请公布号 |
US2016005659(A1) |
申请公布日期 |
2016.01.07 |
申请号 |
US201514692972 |
申请日期 |
2015.04.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SONG Hyun-Seung |
分类号 |
H01L21/8234;H01L21/027;H01L21/768 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a semiconductor device, the method comprising:
forming an interlayer insulating layer on a substrate; forming a plurality of contact holes penetrating the interlayer insulating layer, the plurality of contact holes arranged along a first direction and a second direction perpendicular to the first direction; and forming contacts in the contact holes, each contact hole being formed using a photo mask that is distinct from a photo mask used for forming a contact hole immediately adjacent to each contact hole in the first direction and distinct from a photo mask used for forming a contact hole immediately adjacent to each contact hole in the second direction, and top surfaces of the contacts being at a same level from the substrate. |
地址 |
Suwon-si KR |