发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 Embodiments provide methods of manufacturing a semiconductor device. The method includes forming an interlayer insulating layer on a substrate; forming a plurality of contact holes penetrating the interlayer insulating layer, the plurality of contact holes arranged along a first direction and a second direction perpendicular to the first direction; and forming contacts in the contact holes, each contact hole being formed using a photo mask that is distinct from a photo mask used for forming a contact hole immediately adjacent to each contact hole in the first direction and distinct from a photo mask used for forming a contact hole immediately adjacent to each contact hole in the second direction, and top surfaces of the contacts being at a same level from the substrate.
申请公布号 US2016005659(A1) 申请公布日期 2016.01.07
申请号 US201514692972 申请日期 2015.04.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SONG Hyun-Seung
分类号 H01L21/8234;H01L21/027;H01L21/768 主分类号 H01L21/8234
代理机构 代理人
主权项 1. A method of manufacturing a semiconductor device, the method comprising: forming an interlayer insulating layer on a substrate; forming a plurality of contact holes penetrating the interlayer insulating layer, the plurality of contact holes arranged along a first direction and a second direction perpendicular to the first direction; and forming contacts in the contact holes, each contact hole being formed using a photo mask that is distinct from a photo mask used for forming a contact hole immediately adjacent to each contact hole in the first direction and distinct from a photo mask used for forming a contact hole immediately adjacent to each contact hole in the second direction, and top surfaces of the contacts being at a same level from the substrate.
地址 Suwon-si KR