发明名称 THIN FILM TRANSISTOR SUBSTRATE, LIQUID CRYSTAL DISPLAY PANEL HAVING THE SAME AND METHOD OF MANUFACTURING THE SAME
摘要 A thin film transistor substrate includes a gate electrode arranged on a substrate, a gate insulation layer arranged on the gate electrode, an active pattern arranged on the gate insulation layer, a source electrode overlapping a first end portion of the active pattern, and a drain electrode overlapping a second and opposite end portion of the active pattern. A fluorocarbon-like material is arranged on one or more of surfaces of at least one of the active pattern, the source electrode and the drain electrode, and on a photoresist pattern used in the formation process of the thin film substrate. The fluorocarbon-like material on the photoresist pattern serves to maintain a shape and size of the photoresist pattern during subsequent patterning processes.
申请公布号 US2016005616(A1) 申请公布日期 2016.01.07
申请号 US201514752267 申请日期 2015.06.26
申请人 Samsung Display Co., Ltd. 发明人 CHO Hyun-Min;KIM Dong-Il
分类号 H01L21/308;G02F1/1368;H01L21/311;G02F1/1362;H01L29/786;H01L29/66 主分类号 H01L21/308
代理机构 代理人
主权项 1. A thin film transistor substrate, comprising: a base substrate; a gate electrode arranged on the base substrate; a gate insulation layer arranged on the gate electrode; an active pattern arranged on the gate insulation layer; a source electrode overlapping a first end portion of the active pattern; and a drain electrode overlapping a second and opposite end portion of the active pattern, wherein a fluorocarbon-like material is arranged on one or more of surfaces of at least one element selected from a group consisting of the active pattern, the source electrode and the drain electrode.
地址 Yongin-City KR