发明名称 |
THIN FILM TRANSISTOR SUBSTRATE, LIQUID CRYSTAL DISPLAY PANEL HAVING THE SAME AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A thin film transistor substrate includes a gate electrode arranged on a substrate, a gate insulation layer arranged on the gate electrode, an active pattern arranged on the gate insulation layer, a source electrode overlapping a first end portion of the active pattern, and a drain electrode overlapping a second and opposite end portion of the active pattern. A fluorocarbon-like material is arranged on one or more of surfaces of at least one of the active pattern, the source electrode and the drain electrode, and on a photoresist pattern used in the formation process of the thin film substrate. The fluorocarbon-like material on the photoresist pattern serves to maintain a shape and size of the photoresist pattern during subsequent patterning processes. |
申请公布号 |
US2016005616(A1) |
申请公布日期 |
2016.01.07 |
申请号 |
US201514752267 |
申请日期 |
2015.06.26 |
申请人 |
Samsung Display Co., Ltd. |
发明人 |
CHO Hyun-Min;KIM Dong-Il |
分类号 |
H01L21/308;G02F1/1368;H01L21/311;G02F1/1362;H01L29/786;H01L29/66 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
1. A thin film transistor substrate, comprising:
a base substrate; a gate electrode arranged on the base substrate; a gate insulation layer arranged on the gate electrode; an active pattern arranged on the gate insulation layer; a source electrode overlapping a first end portion of the active pattern; and a drain electrode overlapping a second and opposite end portion of the active pattern, wherein a fluorocarbon-like material is arranged on one or more of surfaces of at least one element selected from a group consisting of the active pattern, the source electrode and the drain electrode. |
地址 |
Yongin-City KR |