HIGH EFFICIENCY APPARATUS AND METHOD FOR DEPOSITING A LAYER ON A THREE DIMENSIONAL STRUCTURE

摘要

In one embodiment, a processing apparatus may include a process chamber configured to house a substrate and a hybrid source assembly that includes a gas channel coupled to a molecular source; and a plasma chamber configured to generate a plasma and isolated from the gas channel. The processing apparatus may also include an extraction assembly disposed between the hybrid source assembly and process chamber, coupled to the gas channel and plasma chamber, and configured to direct an ion beam to a substrate, the ion beam comprising angled ions wherein the angled ions form a non-zero angle with respect to a perpendicular to a substrate plane; and configured to direct a molecular beam comprising molecular species received from the gas channel to the substrate.

主权项

1. A processing apparatus, comprising:
a process chamber configured to house a substrate; a hybrid source assembly, comprising:
a gas channel coupled to a molecular source; anda plasma chamber configured to generate a plasma and isolated from the gas channel; and an extraction assembly disposed between the hybrid source assembly and process chamber, coupled to the gas channel and plasma chamber, and configured to:
direct an ion beam to the substrate, the ion beam comprising angled ions wherein the angled ions form a non-zero angle with respect to a perpendicular to a substrate plane; anddirect a molecular beam comprising molecular species received from the gas channel to the substrate.