| 发明名称 |
Memory Programming Methods and Memory Systems |
| 摘要 |
Memory programming methods and memory systems are described. One example memory programming method includes programming a plurality of main cells of a main memory and erasing a plurality of second main cells of the main memory. The memory programming method further includes first re-writing one-time programmed data within a plurality of first one-time programmed cells of a one-time programmed memory during the programming and second re-writing one-time programmed data within a plurality of second one-time programmed cells of a one-time programmed memory during the erasing. Additional method and apparatus are described. |
| 申请公布号 |
US2016005442(A1) |
申请公布日期 |
2016.01.07 |
| 申请号 |
US201514853557 |
申请日期 |
2015.09.14 |
| 申请人 |
Micron Technology, Inc. |
发明人 |
Kunihiro Takafumi |
| 分类号 |
G11C7/00 |
主分类号 |
G11C7/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory programming method comprising:
programming a plurality of first main cells of a main memory; erasing a plurality of second main cells of the main memory; first re-writing one-time programmed data within a plurality of first one-time programmed cells of a one-time programmed memory during the programming; and second re-writing one-time programmed data within a plurality of second one-time programmed cells of a one-time programmed memory during the erasing. |
| 地址 |
Boise ID US |
