| 主权项 |
1. A crucible for sublimating a source material to grow a single crystal, comprising:
a bottom; and a cylindrical side surface, wherein the crucible includes a third region configured to receive the source material a second region extending from the third region in a direction away from the bottom, and a first region extending from the second region in a direction away from the bottom, the crucible includes a first wall and a second wall inside the side surface, the first wall surrounding the first region, the second wall surrounding the second region, the crucible includes a first chamber between the first wall and the side surface and a second chamber between the second wall and the side surface, a distance between horizontal opposite portions on the first wall is constant or increases as the horizontal opposite portions approach the bottom, and a distance between horizontal opposite portions on the second wall increases as the horizontal opposite portions approach the bottom, an inclination angle α of the first wall with respect to a direction perpendicular to the bottom is smaller than an inclination angle β of the second wall with respect to a direction perpendicular to the bottom, the inclination angle α is 30 degrees or less, the inclination angle β is 70 degrees or less, and a difference between the inclination angle β and the inclination angle α is 50 degrees or less, and the first chamber includes a heat insulator, and the second chamber is empty. |
