SEMICONDUCTOR DEVICE

摘要

Provided is a semiconductor device capable of preventing a malfunction of a high-side gate driver circuit that is caused by a negative voltage surge. A diode is connected between a p-type bulk substrate configuring a semiconductor layer, and a first potential (GND potential), and a signal is transmitted from a control circuit that is formed in an n diffusion region configuring a first semiconductor region through a first level down circuit and a first level up circuit to a high-side gate driver circuit that is formed in an n diffusion region configuring a second semiconductor region. As a result, a malfunction of the high-side gate driver circuit that is caused by a negative voltage surge can be prevented.

主权项

1. A semiconductor device, comprising:
a semiconductor layer of a first conductivity type; first and second semiconductor regions of a second conductivity type, which are disposed in a front surface layer of the semiconductor layer or on the semiconductor layer and have first and second parasitic diodes formed between the semiconductor layer and the first and second semiconductor regions respectively; a control circuit disposed in the first semiconductor region; a gate driver circuit disposed in a front surface layer of the second semiconductor region; a first diode that is disposed in a surge current path formed by a negative surge voltage and passing through the second parasitic diode, and that has reverse characteristics to a surge current; and a level shift circuit that outputs, to the gate driver circuit, a first gate control signal that is output from the control circuit.