| 发明名称 |
β-GA2O3-BASED SINGLE CRYSTAL SUBSTRATE |
| 摘要 |
The present invention is to provide a β-GA_2O_3-based single crystal substrate having excellent crystal quality. According to an embodiment of the present invention, provided is a β-GA_2O_3-based single crystal substrate (1) having not higher than 7.31×10^4cm^(-2) of average potential density. |
| 申请公布号 |
KR20160002323(A) |
申请公布日期 |
2016.01.07 |
| 申请号 |
KR20150027292 |
申请日期 |
2015.02.26 |
| 申请人 |
가부시키가이샤 다무라 세이사쿠쇼;가부시키가이샤 코하 |
发明人 |
고시 기미요시;와타나베 신야;다키자와 마사루;야마오카 유;와타나베 마코토;마스이 다케카즈 |
| 分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
| 代理机构 |
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