| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a high-quality and highly reliable through electrode capable of being manufactured by a low-cost manufacturing method is formed.SOLUTION: A semiconductor device comprises: a two-tier through hole formed by forming from a second surface side of a semiconductor substrate, a first hole having a bottom at a predetermined position in a thickness direction in a tapered shape where a diameter of an opening is decreased toward the bottom of the hole, and forming a cylindrical second hole from the first hole to reach an I/O pad on a first surface side; a through electrode formed on the I/O pad and on a wall surface of the two-tier through hole by a metal film after forming an inorganic insulation film on the wall surface of the two-tier through hole and on the second surface by a chemical vapor deposition method, and subsequently performing dry etching on an entire surface of the insulation film to remove the insulation film on the I/O pad while leaving the insulation film on the wall surface of the two-tier through hole and the second surface; and a wiring pattern on the second surface, which is formed to be connected to the through electrode. |
