THREE DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE

摘要

A three-dimensional semiconductor memory device is provided. A stacked structure is formed on a substrate. The stacked structure includes conductive patterns vertically stacked on the substrate. A selection structure including selection conductive patterns is stacked on the stacked structure. A channel structure penetrates the selection structure and the stacked structure to connect to the substrate. An upper interconnection line crosses the selection structure. A conductive pad is disposed on the channel structure to electrically connect the upper interconnection line to the channel structure. A bottom surface of the conductive pad is positioned below a top surface of the uppermost selection conductive pattern of the selection conductive patterns.

主权项

1. A three-dimensional semiconductor memory device, comprising:
a stacked structure including a plurality of conductive patterns vertically stacked on a substrate; a selection structure including a plurality of selection conductive patterns stacked on the stacked structure; a channel structure penetrating the selection structure and the stacked structure to connect to the substrate; an upper interconnection line crossing the selection structure; and a conductive pad disposed on the channel structure to electrically connect the upper interconnection line to the channel structure, wherein a bottom surface of the conductive pad is positioned below a top surface of the uppermost selection conductive pattern of the plurality of selection conductive patterns.