SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

Provided is a method for manufacturing a semiconductor device with which it is possible to sufficiently improve channel mobility. The surface layer of a silicon carbide base (11) of a wafer (W) is exposed to a halogen atmosphere containing fluorine that was dissociated from silicon tetrafluoride gas using plasma, and a gate insulation film (15) is formed on the exposed surface layer.