METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

摘要

There is a problem of over side etching caused by etching an oxide semiconductor surface layer when an etching process is performed on an oxide semiconductor made of zinc as a main component. For solving the problem, the surface of the oxide semiconductor is pretreated by a pretreatment solution for selectively etching only a zinc oxide phase on the surface of the oxide semiconductor. Thereby, the generation of voids on an interface between photoresist and the oxide semiconductor is prevented. So, the amount of side etching after an oxide semiconductor etching process can be reduced.