| 摘要 |
PROBLEM TO BE SOLVED: To prevent deterioration of switching loss, by suppressing increase in the gate capacity incident to the cell shrinkage of an IE type trench gate IGBT.SOLUTION: A cell formation region is constituted of a linear active cell region LCa, a linear hole collector cell region LCc, and a linear inactive cell region LCi therebetween. The upper surface of third and fourth trench gate electrodes TG3, TG4, formed on the opposite sides of the linear hole collector cell region LCc and connected electrically with an emitter electrode EE, is made lower than the upper surface of first and second trench gate electrodes TG1, TG2, formed on the opposite sides of the linear active cell region LCa and connected electrically with the gate electrode. |
