FINFET WITH CONFINED EPITAXY

摘要

Embodiments of the present invention provide a fin-type field effect transistor (finFET) with confined epitaxy. A protective layer is formed on a fin. The protective layer is recessed to expose the fin top. A fin cavity is formed in the fin. An epitaxial region is formed in the fin cavity. The epitaxial region has a confined portion and a diamond-shaped portion, resulting in increased epitaxial volume. The increased epitaxial volume can result in enhanced carrier mobility and improved device performance.

主权项

1. A method of forming a semiconductor structure comprising:
forming a fin on a semiconductor substrate; forming a shallow trench isolation layer on the semiconductor substrate, wherein the shallow trench isolation layer is adjacent with a lower section of the fin; depositing a protective layer on the fin; removing a portion of the protective layer such that a top portion of the fin is exposed while sidewalls of the fin remain covered; forming a fin cavity in the fin; and depositing a semiconductor material in the fin cavity.