FIN STRUCTURES AND METHODS OF MANFACTURING THE FIN STRUCTURES, AND FIN TRANSISTORS HAVING THE FIN STRUCTURES AND METHODS OF MANUFACTURING THE FIN TRANSISTORS

摘要

Fin structures and methods of forming the fin structure are provided. Fin structures may include a semiconductor fin that is on a silicon layer and includes a Group IV semiconductor material that includes germanium, an isolation insulation layer at two lower sides of the semiconductor fin and a bottom insulation layer under the semiconductor fin and the isolation insulation layer. The silicon layer may be a bulk silicon substrate, and the semiconductor fin may be a silicon germanium (SiGe) layer, a silicon germanium carbon (SiGeC) layer, or a single germanium (Ge) layer. The bottom insulation layer may be an oxide of a Group IV semiconductor material that includes germanium, which the semiconductor fin includes.

主权项

1. A fin structure comprising:
a semiconductor fin on a silicon layer and comprises a Group IV semiconductor material that includes germanium; a bottom insulation layer under the semiconductor fin, wherein the bottom insulation layer comprises a planar portion on the silicon layer and a protruding portion protruding from the planar portion that is under the semiconductor fin; and an isolation insulation layer on opposing sides of the protruding portion of the bottom insulation layer.