| 发明名称 |
NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
A nonvolatile memory device having a plurality of unit cells, each of the plurality of unit cells includes a first transistor suitable for having a fixed threshold voltage, and a second transistor suitable for coupling to the first transistor in parallel and having a variable threshold voltage. |
| 申请公布号 |
US2016005754(A1) |
申请公布日期 |
2016.01.07 |
| 申请号 |
US201514857003 |
申请日期 |
2015.09.17 |
| 申请人 |
SK hynix Inc. |
发明人 |
PARK Sung-Kun |
| 分类号 |
H01L27/115 |
主分类号 |
H01L27/115 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A nonvolatile memory device having a plurality of unit cells, each of the plurality of unit cells comprising:
a first transistor suitable for having a fixed threshold voltage; and a second transistor suitable for coupling to the first transistor in parallel and having a variable threshold voltage. |
| 地址 |
Gyeonggi-do KR |
