| 摘要 |
A semiconductor device according to an embodiment includes a normally off transistor having a first source, a first drain, a first gate connected to a common gate terminal, and a body diode, a normally on transistor having a second source connected to the first drain, a second drain, and a second gate, a capacitor provided between the common gate terminal and the second gate, a first diode having a first anode connected to between the capacitor and the second gate and a first cathode connected to the first source, and a second diode having a second anode connected to the first source and a second cathode connected to the second drain. |
| 主权项 |
1. A semiconductor device comprising:
a normally off transistor including a first source, a first drain, a first gate connected to a common gate terminal, and a body diode; a normally on transistor including a second source connected to the first drain, a second drain, and a second gate; a capacitor provided between the common gate terminal and the second gate; a first diode including a first anode connected to a portion between the capacitor and the second gate and a first cathode connected to the first source; and a second diode including a second anode connected to the first source and a second cathode connected to the second drain. |
