ADVANCED ULTRA LOW K SICOH DIELECTRICS PREPARED BY BUILT-IN ENGINEERED PORE SIZE AND BONDING STRUCTURED WITH CYCLIC ORGANOSILICON PRECURSORS

摘要

Disclosed herein is an ultra-low dielectric (k) film and methods of making thereof. A ultra-low k film has a covalently bonded network comprising atoms of silicon, oxygen, carbon, and hydrogen, a cyclotrisilane structure, and a plurality of pores having a pore size distribution (PSD) of less than about 1.1 nanometers (nm). The ultra-low k film has a k value of less than about 2.4 and at least about 28 atomic percent of carbon.

主权项

1. An ultra-low dielectric (k) film comprising:
a covalently bonded network comprising atoms of silicon, oxygen, carbon, hydrogen, and a cyclotrisilane structure; and a plurality of pores having a pore size distribution (PSD) of less than about 2.0 nanometers (nm); wherein the ultra-low k film has a k value of less than about 2.7.