| 发明名称 |
MEMORY SYSTEM AND METHOD OF DRIVING MEMORY SYSTEM USING ZONE VOLTAGES |
| 摘要 |
A method is provided for driving a nonvolatile memory device, including multiple strings, where each string is formed by penetrating plate-shaped word lines stacked on a substrate. The method includes configuring the word lines of a string in multiple zones based on zone configuration information, and applying zone voltages to the zones, respectively. The zone configuration information is varied according to a mode of operation. |
| 申请公布号 |
US2016005478(A1) |
申请公布日期 |
2016.01.07 |
| 申请号 |
US201514855433 |
申请日期 |
2015.09.16 |
| 申请人 |
NAM SANG-WAN;KIM MINSU;LEE KANG-BIN;PARK KITAE |
发明人 |
NAM SANG-WAN;KIM MINSU;LEE KANG-BIN;PARK KITAE |
| 分类号 |
G11C16/24;G11C16/04;G11C16/26;G11C16/08;G11C16/14 |
主分类号 |
G11C16/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of driving a nonvolatile memory device, comprising a plurality of strings, each string formed by penetrating plate-shaped word lines stacked on a substrate, the method comprising:
configuring the word lines of a string in a plurality of zones based on zone configuration information; and applying zone voltages to the zones, respectively, wherein the zone configuration information is varied according to a mode of operation. |
| 地址 |
HWASEONG-SI KR |
