| 主权项 |
1. A method for characterizing a semiconductor sample, said method implemented using an analysis system comprising:
a transient photoconductive decay measurement subsystem, a database, a data analysis subsystem, and a statistical analysis subsystem,
said transient photoconductive decay measurement subsystem, database, data analysis subsystem and statistical analysis subsystem connected to each other by an interconnection,said method comprising the steps of:
shining, using the transient photoconductive decay measurement subsystem, light on one or more points in said semiconductor sample; measuring, using the transient photoconductive decay measurement subsystem, one or more voltage decay curves corresponding to said shining of light on said one or more points in said semiconductor sample; extracting, using the data analysis subsystem, one or more intermediate voltage decay curves corresponding to one or more measured voltage decay curves; obtaining, using the data analysis subsystem, one or more normalized decay curves corresponding to one or more intermediate voltage decay curves, each of the said one or more normalized decay curves corresponding to one or more discrete estimates of survival functions; analyzing, using the statistical analysis subsystem, said obtained one or more normalized decay curves, said analyzing comprising
obtaining one or more discrete estimates of the probability of recombination corresponding to the one or more normalized decay curves, andcomputing one or more summary statistics corresponding to each of said obtained one or more discrete estimates; and determining, by either the statistical analysis subsystem or the data analysis subsystem, the presence of nonuniformities within said semiconductor sample based on results of said analyzing. |
