| 摘要 |
A technique is provided which, without decreasing the opening ratio of an imaging panel, decreases the pattern defects in the drain electrode of thin film transistors and the data lines in the imaging panel. This imaging panel images scintillation converted by a scintillator from x-rays passing through an imaging target. In each pixel (13), the imaging panel is provided with multiple gate lines (11) and multiple data lines (12). The imaging panel is provided with a conversion element (15) which converts scintillation into an electric charge, and a thin film transistor (14) which is connected to a gate line (11), a data line (12) and the conversion element (15). The drain electrode (144) is formed such that the edges (144E1, 144E2) of the drain electrode (144) of the thin film transistor (14) that are near a data line (12) are disposed more to the inside of the pixel (13) than the edges (15E1, 15E2) of the conversion element (15) that are near a data line (12). |
