SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

The present invention relates to a semiconductor device and a method for manufacturing the same. The semiconductor device includes an active pattern which protrudes from a substrate, a gate structure which crosses the active pattern, and source/drain regions which are arranged on the active pattern on both sides of the gate structure. Each of the source/drain regions includes a first epitaxial pattern which touches the active pattern, and a second epitaxial pattern on the first epitaxial pattern. The first epitaxial pattern includes a material which has the same lattice constant as the substrate. The second epitaxial pattern includes a material which has a larger lattice constant than the first epitaxial pattern.