BLANKMASK FOR EXTREME ULTRA-VIOLET LITHOGRAPHY AND PHOTOMASK USING THE SAME

摘要

The present invention can manufacture a blank mask for extreme ultra-violet lithography which can minimize the generation of foreign substances and defects in a process since an absorption layer and a reflection prevention layer can be simultaneously etched through only one-time etching process by having the absorption layer and the reflection prevention layer, which constitute an absorption film, composed of a material etched by the same etching material, and can manufacture a photomask using the same. In addition, the present invention provides a blank mask for extreme ultra-violet lithography which has an excellent pattern accuracy in forming a pattern of 14 nm or less, especially 7 nm or less by ensuring required optical properties of the absorption film by adjusting a composition ratio of light elements constituting the absorption film and realizing thinness of the absorption film as well, and also provides a high-quality photomask for extreme ultra-violet lithography.