| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which prevents entry of hydrogen, fluorine and the like generated in a semiconductor process into a ferroelectric capacitor to maintain ferroelectricity of a memory; and provide a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device manufacturing method comprises the steps of: forming a capacitor 15 having a lower electrode 14, a ferroelectric film 13 and an upper electrode 12; forming an insulating protection film 16 which covers the capacitor 15, and an interlayer insulation film 11; polishing the interlayer insulation film 11 to a position of the insulating protection film 16 which covers a top face of the capacitor and subsequently forming an opening for exposing a part of the upper electrode 12 of the capacitor 15 and a contact hole above the lower electrode 14 or above a transistor on semiconductor substrate; grinding first conductor films 19, 35 and a second conductor film 36 which are formed in the opening and in the contact hole so as to be electrically connected with the lower electrode 14 or the transistor to form a conductive protection film 19 for filling the inside of the opening and a contact plug 37 for filling the contact hole; and forming a wiring 25 on the conductive protection film and on the contact plug. |
