METHOD AND SYSTEM FOR PROVIDING RARE EARTH MAGNETIC JUNCTIONS USABLE IN SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY APPLICATIONS

摘要

A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a pinned layer and nonmagnetic spacer layer between the free and pinned layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The free and pinned layers each has a layer perpendicular magnetic anisotropy energy greater than an out-of-plane demagnetization energy. At least one of the pinned layer and the free layer includes a multilayer. The multilayer includes at least one bilayer. Each of the bilayer(s) has a first layer and a second layer. The first layer includes an alloy of a magnetic transition metal and a rare earth. The second layer includes an amorphous magnetic layer. The multilayer has a nonzero perpendicular magnetic anisotropy up to at least four hundred degrees Celsius.

主权项

1. A magnetic junction residing on a substrate and usable in a magnetic device comprising:
a free layer, the free layer being switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction, the free layer having a free layer perpendicular magnetic anisotropy energy greater than a free layer out-of-plane demagnetization energy; a nonmagnetic spacer layer; and a pinned layer, the nonmagnetic spacer layer residing between the pinned layer and the free layer, the pinned layer having a pinned layer perpendicular magnetic anisotropy energy greater than a pinned layer out-of-plane demagnetization energy, at least one of the pinned layer and the free layer including a multilayer, the multilayer including at least one bilayer, each of the at least one bilayer including a first layer and a second layer, the first layer including an alloy of a magnetic transition metal and a rare earth, the second layer including an amorphous magnetic layer, the multilayer having a nonzero multilayer perpendicular magnetic anisotropy up to a temperature of at least four hundred degrees Celsius.