INTEGRATED CIRCUIT PRODUCT WITH A GATE HEIGHT REGISTRATION STRUCTURE

摘要

One illustrative device disclosed includes, among other things, first and second active regions that are separated by an isolation region, first and second replacement gate structures positioned above the first and second active regions, respectively, and a gate registration structure positioned above the isolation region, wherein the gate registration structure comprises a layer of insulating material positioned above the isolation region and a polish-stop layer and wherein a first end surface of the first replacement gate structure abuts and engages a first side surface of the gate registration structure and a second end surface of the second replacement gate structure abuts and engages a second side surface of the gate registration structure.

主权项

1. An integrated circuit product, comprising:
first and second spaced-apart active regions of a semiconductor substrate that are separated by an isolation region positioned in said substrate; a first replacement gate structure positioned above said first active region, said first replacement gate structure having a first end surface; a second replacement gate structure positioned above said second active region, said second replacement gate structure having a second end surface; and a gate registration structure positioned above said isolation region, wherein said gate registration structure comprises a layer of insulating material positioned above said isolation region and a polish-stop layer positioned on said layer of insulating material and wherein said first end surface of said first replacement gate structure abuts and engages a first side surface of said gate registration structure and said second end surface of said second replacement gate structure abuts and engages a second side surface of said gate registration structure, wherein said first and second side surfaces of said gate registration structure are located on opposing sides of said gate registration structure.