METHOD FOR PURIFYING METALLURGICAL SILICON

摘要

The present disclosure provides a method for upgrading materials, for example crystalline metallurgical silicon, to remove impurities using microwave processing to induce migration of impurities in the material to one or both of internal surfaces where they are trapped and neutralized or one or more external surfaces followed by trapping of the impurity by binding to gettering agents on the surface with subsequent removal of the impurity and gettering agent.

主权项

1. A method for removing impurities from semiconductors,
comprising: irradiating a semiconductor with microwave radiation with power in a range from about 0.3 kW to about 300 kW, at a frequency in a range from about 300 MHz to 600 GHz for a selected period of time to cause microwave thermal and field induced migration of impurities to one or more internal interfaces at which the impurities are trapped and neutralized and/or to one or more external surfaces having located thereon gettering agents at which the impurities bind with the gettering agent; and for impurities bound to the gettering agent on the one or more external surfaces, removing the gettering agents.