发明名称 OPTICAL DEVICE STRUCTURE USING GaN SUBSTRATES FOR LASER APPLICATIONS
摘要 An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about −1 degree towards (000-1) and less than about +/−0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region.
申请公布号 US2016006217(A1) 申请公布日期 2016.01.07
申请号 US201514736939 申请日期 2015.06.11
申请人 Soraa Laser Diode, Inc. 发明人 Raring James W.;Feezell Daniel F.;Pfister Nicholas J.;Sharma Rajat;Schmidt Mathew C.;Elsass Christiane Poblenz;Chang Yu-Chia
分类号 H01S5/22;H01S5/20;H01S5/32;H01S5/343;H01S5/02;H01S5/028 主分类号 H01S5/22
代理机构 代理人
主权项
地址 Goleta CA US