发明名称 |
METHOD OF FABRICATING A MERGED P-N JUNCTION AND SCHOTTKY DIODE WITH REGROWN GALLIUM NITRIDE LAYER |
摘要 |
A method for fabricating a merged p-i-n Schottky (MPS) diode in gallium nitride (GaN) based materials includes providing an n-type GaN-based substrate having a first surface and a second surface. The method also includes forming an n-type GaN-based epitaxial layer coupled to the first surface of the n-type GaN-based substrate, and forming a p-type GaN-based epitaxial layer coupled to the n-type GaN-based epitaxial layer. The method further includes removing portions of the p-type GaN-based epitaxial layer to form a plurality of dopant sources, and regrowing a GaN-based epitaxial layer including n-type material in regions overlying portions of the n-type GaN-based epitaxial layer, and p-type material in regions overlying the plurality of dopant sources. The method also includes forming a first metallic structure electrically coupled to the regrown GaN-based epitaxial layer. |
申请公布号 |
US2016005835(A1) |
申请公布日期 |
2016.01.07 |
申请号 |
US201514853930 |
申请日期 |
2015.09.14 |
申请人 |
AVOGY, INC. |
发明人 |
Kizilyalli Isik C.;Bour Dave P.;Prunty Thomas R.;Nie Hui;Diduck Quentin;Aktas Ozgur |
分类号 |
H01L29/66;H01L29/868;H01L29/872;H01L29/20 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
1. A method for fabricating a merged p-i-n Schottky (MPS) diode in gallium nitride (GaN) based materials, the method comprising:
providing an n-type GaN-based substrate having a first surface and a second surface; forming an n-type GaN-based epitaxial layer coupled to the first surface of the n-type GaN-based substrate; forming a p-type GaN-based epitaxial layer coupled to the n-type GaN-based epitaxial layer; removing portions of the p-type GaN-based epitaxial layer to form a plurality of dopant sources; regrowing a GaN-based epitaxial layer including n-type material in regions overlying portions of the n-type GaN-based epitaxial layer and p-type material in regions overlying the plurality of dopant sources; and forming a first metallic structure electrically coupled to the regrown GaN-based epitaxial layer. |
地址 |
San Jose CA US |