COUNTER FOR WRITE OPERATIONS AT A DATA STORAGE DEVICE

摘要

A data storage device includes a resistive random access memory (ReRAM) having a three-dimensional (3D) memory configuration that is monolithically formed in one or more physical levels of arrays of memory cells having an active area disposed above a silicon substrate. The data storage device further includes circuitry associated with operation of the memory cells. A method includes performing a first number of write operations to the ReRAM. The method further includes incrementing a value of a counter a second number of times in response to performing at least one of the write operations. The second number is less than the first number.