| 摘要 |
PROBLEM TO BE SOLVED: To perform heating more accurately, uniformly and rapidly in equipment of performing a heat treatment on a wafer.SOLUTION: In heat treatment equipment 1, a wafer W is supported on a support medium 4 and an infrared laser beam irradiation device for applying infrared laser beams having a beam diameter larger than a diameter of the wafer on a rear face of the wafer is provided and infrared laser beams are applied on the rear face of the wafer W. Since the rear face of the wafer W is normally composed of a homogeneous material and a flat and smooth surface, applied laser beams are absorbed with the same absorptance at any place on the rear face of the wafer W and the places on the rear face are heated to the same temperature. As a result, uniform results are achieved by a heat treatment on a surface of the wafer W. |
