发明名称 GROUP 13 ELEMENT NITRIDE CRYSTAL LAYER AND FUNCTION ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a crystal layer and a function element which, in a group 13 element nitride crystal layer, obtains desired conductivity and can suppress functional heterogeneity due to heterogeneity in the conductivity of the crystal layer.SOLUTION: On the surface 3a of a crystal layer 3 made of group 13 element nitride, a first region 8, and a second region 9 having carrier concentration and defect density which are higher than those of the first region 8 are present. The ratio (second region/first region) of a product of the carrier concentration and the defect density of the second region 9 to the product of the carrier concentration and the defect density of the first region 8 is 10 or more and 1000 or less.
申请公布号 JP2016001650(A) 申请公布日期 2016.01.07
申请号 JP20140120572 申请日期 2014.06.11
申请人 NGK INSULATORS LTD 发明人 IWAI MAKOTO;YOSHINO TAKASHI
分类号 H01L33/32;C23C16/34;C30B29/38;H01L21/205 主分类号 H01L33/32
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