| 发明名称 |
HIGH-PURITY 1H-HEPTAFLUOROCYCLOPENTENE |
| 摘要 |
The present invention is a 1H-Heptafluorocyclopentene having a purity of 999 wt % or more and an organochlorine-based compound content of 350 ppm by weight or less. The present invention provides a high-purity 1H-Heptafluorocyclopentene that may be useful as a plasma reaction gas for semiconductors. |
| 申请公布号 |
US2016002530(A1) |
申请公布日期 |
2016.01.07 |
| 申请号 |
US201414769264 |
申请日期 |
2014.02.19 |
| 申请人 |
ZEON CORPORATION |
发明人 |
Sugimoto Tatsuya |
| 分类号 |
C09K13/00;B65D25/38;C07C23/08 |
主分类号 |
C09K13/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. 1H-Heptafluorocyclopentene haying a purity of 99.9 wt % or more and an organochlorine-based compound content of 350 ppm by weight or less. |
| 地址 |
Chiyoda-ku, Tokyo JP |
