| 发明名称 |
POLISHING COMPOSITION |
| 摘要 |
Provided is a polishing composition which can polish a sapphire substrate having a non-polar plane or a semi-polar plane at a high polishing rate.;The invention is a polishing composition used in an application to polish a sapphire substrate having a non-polar plane or a semi-polar plane, the polishing composition containing colloidal silica particles and water, in which a value obtained by dividing a specific surface area (unit: m2/g) of the colloidal silica particles by a number average particle diameter (unit: nm) of the colloidal silica particles, that is, (specific surface area/number average particle diameter) is 0.5 or more and 3.0 or less. |
| 申请公布号 |
US2016002500(A1) |
申请公布日期 |
2016.01.07 |
| 申请号 |
US201414768998 |
申请日期 |
2014.02.07 |
| 申请人 |
FUJIMI INCORPORATED |
发明人 |
ITO Jun;HOTTA Kazutoshi;SUGIYAMA Hiroyasu;MORINAGA Hitoshi |
| 分类号 |
C09G1/02;B24B37/04 |
主分类号 |
C09G1/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A polishing composition used in an application to polish a sapphire substrate having a non-polar plane or a semi-polar plane, the polishing composition comprising:
colloidal silica particles and water, wherein a value obtained by dividing a specific surface area (unit: m2/g) of the colloidal silica particles by a number average particle diameter (unit: nm) of the colloidal silica particles, that is, (specific surface area/number average particle diameter) is 0.5 or more and 3.0 or less. |
| 地址 |
Kiyosu-shi, Aichi JP |
