| 摘要 |
Provided is a power semiconductor element current detection device that is not necessary to be operated by a negative voltage while maintaining a high current detection accuracy and being not affected by disturbance noise. A current detection device for a power semiconductor element (10) is provided with: an operational amplifier (20) for fixing the voltage of the emitter terminal (16) of a sense IGBT (12) to a reference power supply (50) voltage of 1 volt or less; and a current-voltage converter (40) configured so that current obtained by proportionally multiplying the current flowing from the sense IGBT (12) into the operational amplifier (20) flows through a resistor (42). The current-voltage converter (40) has an NMOS transistor (41) operating using the voltage level of the ground (17) as a reference and a resistor (42) provided on the high-side of this NMOS transistor (41) and is operated by the voltage level of the ground (17). |
