LINER AND BARRIER APPLICATIONS FOR SUBTRACTIVE METAL INTEGRATION

摘要

Methods and techniques for manufacturing metal interconnect parts, lines, or vias by subtractive etching and liner deposition methods are provided. The methods involve the following steps of: depositing a blanket copper layer; removing regions of the blanket copper layer to form a pattern; treating the patterned metal; depositing a copper-dielectric interface material such that the copper-dielectric interface material adheres only to the patterned copper; depositing a dielectric barrier layer on the substrate; and depositing a dielectric bulk layer on the substrate.