发明名称 PLASMA SOURCE AND METHOD FOR DEPOSITING THIN FILM COATING USING PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION
摘要 PROBLEM TO BE SOLVED: To provide a plasma source or a PECVD source and a process, consuming less energy during operation, compact with high coating efficiencies, and capable of creating a uniform and stable plasma greater than 0.5 meters in length, thereby achieving large area coating.SOLUTION: An AC power source is connected to an electrode including a first electron emitting surface and a second electron emitting surface which are separated by a space including gas, and voltages which are out of phase with one another are supplied to the first and second electron emitting surfaces. Thus, secondary electron current flows between the electron emitting surfaces and a plasma is formed between the electron emitting surfaces. The plasma is linear, has a length of at least about 0.5 meters, and is almost uniformly formed over the plasma length in a state where closed circuit electron drift does not exist substantially.
申请公布号 JP2016001607(A) 申请公布日期 2016.01.07
申请号 JP20150134085 申请日期 2015.07.03
申请人 AGC FLAT GLASS NORTH AMERICA INC;ASAHI GLASS CO LTD;AGC FLAT GLASS EUROPE SA 发明人 MASCHWITZ PETER
分类号 H05H1/24;C23C16/503;H01L21/31 主分类号 H05H1/24
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