发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME |
摘要 |
A semiconductor memory device includes a memory string and a peripheral circuit. The memory string has a pipe cell, a plurality of memory cells, and at least one channel layer having a three-dimensional U-shaped structure. The peripheral circuit is configured to perform an erase operation on the pipe cell. A method of operating the semiconductor memory device includes selecting the memory string and performing the erase operation on the pipe cell. |
申请公布号 |
US2016005476(A1) |
申请公布日期 |
2016.01.07 |
申请号 |
US201514854002 |
申请日期 |
2015.09.14 |
申请人 |
SK HYNIX INC. |
发明人 |
PARK Jung Ho |
分类号 |
G11C16/14;G11C16/04;G11C16/24 |
主分类号 |
G11C16/14 |
代理机构 |
|
代理人 |
|
主权项 |
1. A semiconductor memory device, comprising:
a memory string including a pipe cell, a plurality of memory cells configured to be arranged in series between a bit line and the pipe cell and between a source line and the pipe cell in a vertical direction to the pipe cell, and a channel layer having a three-dimensional U-shaped structure; and a peripheral circuit configured to perform an erase operation on the pipe cell by applying a ground level voltage to the pipe cell when an erase voltage is applied to the plurality of the memory cells. |
地址 |
Icheon-si KR |