发明名称 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME
摘要 A semiconductor memory device includes a memory string and a peripheral circuit. The memory string has a pipe cell, a plurality of memory cells, and at least one channel layer having a three-dimensional U-shaped structure. The peripheral circuit is configured to perform an erase operation on the pipe cell. A method of operating the semiconductor memory device includes selecting the memory string and performing the erase operation on the pipe cell.
申请公布号 US2016005476(A1) 申请公布日期 2016.01.07
申请号 US201514854002 申请日期 2015.09.14
申请人 SK HYNIX INC. 发明人 PARK Jung Ho
分类号 G11C16/14;G11C16/04;G11C16/24 主分类号 G11C16/14
代理机构 代理人
主权项 1. A semiconductor memory device, comprising: a memory string including a pipe cell, a plurality of memory cells configured to be arranged in series between a bit line and the pipe cell and between a source line and the pipe cell in a vertical direction to the pipe cell, and a channel layer having a three-dimensional U-shaped structure; and a peripheral circuit configured to perform an erase operation on the pipe cell by applying a ground level voltage to the pipe cell when an erase voltage is applied to the plurality of the memory cells.
地址 Icheon-si KR