发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 A memory device includes a plurality of memory blocks, and a row decoder including a plurality of decoders including a first decoder and a second decoder, the first decoder being configured to output a first block selection signal for selecting one of the memory blocks and a control signal for causing the second decoder to output a second block selection signal for selecting another one of the memory blocks.
申请公布号 US2016005470(A1) 申请公布日期 2016.01.07
申请号 US201514856523 申请日期 2015.09.16
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 HOSONO Koji;KUROSAWA Tomonori
分类号 G11C16/08 主分类号 G11C16/08
代理机构 代理人
主权项 1. A memory device comprising: a plurality of memory blocks; and a first decoder and a second decoder, the first decoder being configured to output a first block selection signal for selecting at least one of the memory blocks and a control signal for causing the second decoder to output a second block selection signal for selecting at least another one of the memory blocks.
地址 Tokyo JP