OPERATING METHOD OF MEMORY SYSTEM INCLUDING NAND FLASH MEMORY, VARIABLE RESISTANCE MEMORY AND CONTROLLER

摘要

An operating method is for a memory system which includes a NAND flash memory, a resistance variable memory, and a controller controlling the NAND flash memory and the resistance variable memory. The operating method includes receiving data, programming the received data in the NAND flash memory when the received data is at least a super page of data, programming the received data in the resistance variable memory when the received data is not a super page of data, and programming data accumulated in the resistance variable memory in the NAND flash memory when the accumulated data is a super page of data. A super page of data is an entirety of data that is programmable in memory cells connected to a same word line of the NAND flash memory.

主权项

1. A storage device comprising:
a variable resistance memory; a flash memory including a plurality of memory cells connected to a plurality of word lines; and a controller configured to receive data from an external device and program the received data in the variable resistance memory or the flash memory according to a quantity of data to be programmed in the flash memory, wherein the controller is configured to read from the variable resistance memory and program the read data in the flash memory, when the quantity of data accumulated in the variable resistance memory corresponds to a super page of data.