| 摘要 |
This invention provides a light-emitting element that has an n-side electrode that exhibits a high reflectance and is connected to a substrate, the host crystal of which is an (AlxGayInz)2O3 (with 0 ≤ x ≤ 1, 0 ≤ y ≤ 1, 0 ≤ z ≤ 1, and x+y+z = 1) crystal. In one embodiment, a light-emitting element (1) comprising the following is provided: an n-type semiconductor substrate (10), the host crystal of which is an (AlxGayInz)2O3 crystal; and an n-side electrode (15) connected to said n-type semiconductor substrate (10). The n-side electrode (15) has a layered structure that contains a titanium layer (15a) in contact with the n-type semiconductor substrate (10) and a silver layer (15b), consisting primarily of silver, on top of the titanium layer (15a). |
