| 摘要 |
The present invention relates to an active-precharge operation control of a semiconductor memory device. The semiconductor memory device comprises: an active detection unit which detects whether a pre-set duration has passed from a generation time of a normal active command or an additional active pulse during an active detection mode entry period, and generates an additional precharge pulse depending on the detection result; a column control unit which generates an additional active pulse in response to an external column command, a column address, and an additional precharge pulse during the active detection mode entry period; and a core region which is activated in response to the additional active command corresponding to the additional active pulse or the normal active command, and precharged in response to the additional precharge command corresponding to the additional precharge pulse or the normal precharge command. |
