STRUCTURE AND METHOD FOR SINGLE GATE NON-VOLATILE MEMORY DEVICE

摘要

The present disclosure provides an integrated circuit. The integrated circuit includes a substrate; a field effect transistor disposed in a periphery region of the substrate, the field effect transistor including a gate electrode, a first source, a first drain; a floating gate non-volatile memory device disposed in a memory region of the substrate, the floating gate non-volatile memory device including a second source, a third source, and a second drain, wherein the second source, the third source, and the second drain are disposed along an axis; and a floating gate electrode in the memory region including a first portion, a second portion, and a third portion, wherein the first portion, the second portion, and the third portion are electrically connected, wherein the first portion, the second portion and the third portion extend perpendicular to the axis.

主权项

1. An integrated circuit, comprising:
a semiconductor substrate having a periphery region and a memory region; a field effect transistor disposed in the periphery region, the field effect transistor including a gate electrode, a first source and a first drain; a floating gate non-volatile memory device disposed in the memory region, the floating gate non-volatile memory device including a second source, a third source, and a second drain,
wherein the second source, the third source, and the second drain are arranged along an axis,wherein the second drain is disposed between the second source and the third source; and a floating gate electrode in the memory region including a first portion, a second portion, and a third portion,
wherein the first portion, the second portion, and the third portion are electrically coupled,wherein the first portion, the second portion and the third portion extend perpendicular to the axis,wherein the first portion is disposed on a first channel, the first channel extending between the second source and the second drain,wherein the second portion includes a first side surface and a second side surface opposite the first side surface,wherein each of the first side surface and the second side surface is disposed directly above the second drain, andwherein the third portion is disposed on a second channel, the second channel extending between the third source and the second drain.