Contacts for Semiconductor Devices and Methods of Forming Thereof

摘要

A method for a method of forming a semiconductor device includes providing a semiconductor substrate having a bottom surface opposite a top surface with circuitry disposed at the top surface. The method further includes forming a first metal layer having a first metal over the bottom surface of the semiconductor substrate. The first metal layer is formed by depositing an adhesion promoter followed by depositing the first metal.

主权项

1. A method of forming a semiconductor device, the method comprising:
providing a semiconductor substrate having a bottom surface opposite a top surface with circuitry disposed at the top surface; and forming a first metal layer comprising a first metal over the bottom surface of the semiconductor substrate, wherein forming the first metal layer comprising depositing a adhesion promoter followed by depositing the first metal.