发明名称 |
PROCESS FOR TREATING A STRUCTURE |
摘要 |
The disclosure relates to a process for treating a structure, the structure comprising, from its back side to its front side, a carrier substrate, an insulating layer and a useful layer, the useful layer having a free surface, the structure being placed in an atmosphere containing chemical species, the chemical species being capable of reacting chemically with the useful layer. This treatment process is noteworthy in that the useful layer is heated by a pulsed laser beam, the beam sweeping the free surface, the wavelength of the beam differing by, at most, plus or minus 15 nm from a central wavelength, the central wavelength being chosen so that the sensitivity of the reflectivity of the structure relative to the insulating layer is zero. |
申请公布号 |
US2016005613(A1) |
申请公布日期 |
2016.01.07 |
申请号 |
US201414770378 |
申请日期 |
2014.02.25 |
申请人 |
Soitec |
发明人 |
Kononchuk Oleg |
分类号 |
H01L21/3065;H01L21/268 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
1. A method for treating a structure, the structure comprising, from its rear side to its front side, a carrier substrate, an insulating layer, and a useful layer, the useful layer having a free surface, the structure being placed in an atmosphere containing chemical species in a gaseous form, with the chemical species being likely to chemically react with the useful layer with kinetics strictly increasing with the temperature of the useful layer; wherein the useful layer is heated by a pulsed laser beam, with the beam sweeping at least partially the free surface of the useful layer, with the wavelength of the beam being different by less than 15 nm, from a central wavelength, for which the sensitivity of the estimated reflectivity of the structure relative to the insulating layer is zero. |
地址 |
Crolles Cedex FR |