IMPURITY INTRODUCING METHOD, IMPURITY INTRODUCING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT

摘要

A method for introducing impurity into a semiconductor substrate includes bringing a solution containing a compound of an impurity element into contact with a primary surface of a semiconductor substrate; and irradiating the primary surface of the semiconductor substrate with a laser beam through the solution to raise a temperature of the primary surface of the semiconductor substrate at a position irradiated by the laser beam so as to dope the impurity element into the semiconductor substrate. The laser beam irradiation is performed such that the raised temperature does not return to room temperature until a prescribed dose of the impurity element is caused to be doped into the semiconductor substrate.

主权项

1. A method for introducing impurity into a semiconductor substrate, comprising:
bringing a solution containing a compound of an impurity element into contact with a primary surface of a semiconductor substrate; and irradiating the primary surface of said semiconductor substrate with a laser beam through the solution to raise a temperature of the primary surface of said semiconductor substrate at a position irradiated by the laser beam so as to dope the impurity element into the semiconductor substrate, wherein said laser beam irradiation is performed such that said raised temperature does not return to room temperature until a prescribed dose of the impurity element is caused to be doped into the semiconductor substrate.