发明名称 Apparatus For Dynamic Temperature Control Of An Ion Source
摘要 An apparatus for controlling the temperature of an ion source is disclosed. The ion source includes a plurality of walls defining a chamber in which ions are generated. To control the temperature of the ion source, one or more heat shields is disposed exterior to the chamber. The heat shields are made of high temperature and/or refractory material designed to reflect heat back toward the ion source. In a first position, these heat shields are disposed to reflect a first amount of heat back toward the ion source. In a second position, these heat shields are disposed to reflect a lesser second amount of heat back toward the ion source. In some embodiments, the heat shields may be disposed in one or more intermediate positions, located between the first and second positions.
申请公布号 US2016005564(A1) 申请公布日期 2016.01.07
申请号 US201414322357 申请日期 2014.07.02
申请人 Varian Semiconductor Equipment Associates, Inc. 发明人 Chaney Craig R.;Lee William Davis;Bassom Neil J.
分类号 H01J27/02 主分类号 H01J27/02
代理机构 代理人
主权项 1. An apparatus comprising: an ion source having a plurality of walls defining a chamber; and a movable heat shield disposed outside the chamber and proximate at least one of the walls, where the movable heat shield has a first position where a first amount of heat is reflected back toward the chamber and a second position where a second amount of heat is reflected back toward the chamber, the second amount of heat being less than the first amount of heat.
地址 Gloucester MA US