发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device using an oxide semiconductor with stable electrical characteristics and to provide the semiconductor device with high reliability.SOLUTION: The method of manufacturing a semiconductor device comprises the steps of: forming a first insulating film; forming a source electrode, a drain electrode, and an oxide semiconductor film electrically connecting the source electrode and the drain electrode; forming a second insulating film on the oxide semiconductor film in which hydrogen atoms in the film are removed by heat treatment; and forming a gate electrode in a region overlapping the oxide semiconductor film on the second insulating film by performing oxygen doping treatment to the second insulating layer to supply oxygen atoms to the second insulating film. |
申请公布号 |
JP2016001747(A) |
申请公布日期 |
2016.01.07 |
申请号 |
JP20150153114 |
申请日期 |
2015.08.03 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI |
分类号 |
H01L21/336;G09F9/30;H01L21/8242;H01L21/8247;H01L27/108;H01L27/115;H01L27/146;H01L29/786;H01L29/788;H01L29/792 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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