| 摘要 |
PROBLEM TO BE SOLVED: To reduce potential occurrence of an etching residue when patterning a gate electrode film of a pixel part.SOLUTION: A manufacturing method of a solid state image pickup device having a pixel part and a peripheral circuit part comprises: a process of forming on a semiconductor substrate, first element isolation and a first active region of the pixel part and second element isolation and a second active region of the peripheral circuit part; a process of forming a gate electrode film so as to cover the first element isolation, the first active region, the second element isolation and the second active region; a process of selectively injecting an n-type impurity into at least a part of a portion of the gate electrode film corresponding to the pixel part; and a process of performing patterning on the gate electrode film after the process of injecting the n-type impurity, to form a first gate electrode of the pixel part and a second gate electrode of the peripheral circuit part, in which the at least a part includes a part located on a boundary part of the first element isolation and the first active region. |
