| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device including a power switch that allows suppression of the rush current with a small circuit area and a design method of the semiconductor device.SOLUTION: In a power switch that controls supply and blockage of power to each logical block, a gate electrode is connected to a well through a contact electrode, and a body region is connected to a connection part with the contact electrode of the well through a well resistor under a device isolation insulator film, and a delay characteristic between the connection part with the contact electrode of the well and the body region is caused to be different between a plurality of first transistors and a plurality of second transistors that are different from the first transistors from among a plurality of transistors that controls threshold value voltage by changing the potential applied to the body region depending on a signal of the gate electrode to obtain a time difference between changes in the threshold voltage of the transistors. |
