| 发明名称 |
Methods of Forming Structures |
| 摘要 |
Some embodiments include methods of forming structures. Spaced-apart features are formed which contain temperature-sensitive material. Liners are formed along sidewalls of the features under conditions which do not expose the temperature-sensitive material to a temperature exceeding 300° C. The liners extend along the temperature-sensitive material and narrow gaps between the spaced-apart features. The narrowed gaps are filled with flowable material which is cured under conditions that do not expose the temperature-sensitive material to a temperature exceeding 300° C. In some embodiments, the features contain memory cell regions over select device regions. The memory cell regions include first chalcogenide and the select device regions include second chalcogenide. The liners extend along and directly against the first and second chalcogenides. |
| 申请公布号 |
US2016005966(A1) |
申请公布日期 |
2016.01.07 |
| 申请号 |
US201414321419 |
申请日期 |
2014.07.01 |
| 申请人 |
Micron Technology, Inc. |
发明人 |
Kim Hyun Sik;Vasilyeva Irina V.;Campbell Kyle B.;Chong Kyuchul |
| 分类号 |
H01L45/00;H01L21/56;H01L21/02;H01L27/24 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming structures, comprising:
forming spaced-apart features containing temperature-sensitive material; forming liners along sidewalls of the features under conditions which do not expose the temperature-sensitive material to a temperature exceeding 300° C.; the liners extending along the temperature-sensitive material; the liners narrowing gaps between the spaced-apart features; and filling the narrowed gaps with flowable material and curing the flowable material under conditions which do not expose the temperature-sensitive material to a temperature exceeding 300° C. |
| 地址 |
Boise ID US |
